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| www..com 7MBP 50RA-060 IGBT IPM 600V 6x50A+Chopper Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode Collector Power Dissi. DB One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 50 100 50 198 30 60 30 120 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 Units n Outline Drawing Min. 0 0 200 0 V A W A W V mA V mA C V Nm Note: *1: Recommendable Value; 2.5 3.0 Nm (M5) * Electrical Characteristics of Power Circuit ( at Tj=25C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=50A -IC=50A VCE=600V, Input Terminal Open IC=30A -IC=30A Min. Typ. Max. 1.0 2.8 3.0 1.0 2.8 3.3 Units mA V V mA V V DB * Electrical Characteristics of Control Circuit ( at Tj=25C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100C fSW=0~15kHz, TC=-20~100C On Off RIN=20k VDC=0V, IC=0A, Case Temp. Surface Of IGBT Chip Tj=125C Tj=125C Tj=25C Min. 3 10 1.00 1.25 110 20 150 20 75 45 1.5 1425 11.0 0.2 10 2 1500 A s ms V Typ. Max. 18 65 1.70 1.95 125 C Units mA V 1.35 1.60 8.0 1575 12.5 * Dynamic Characteristics ( at TC=Tj=125C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=300V IF=50A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Units s www..com 7MBP 50RA-060 Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. IGBT IPM 600V 6x50A+Chopper * Thermal Characteristics Items Thermal Resistance Typ. Max. 0.63 1.33 1.04 Units C/W 0.05 n Equivalent Circuit Drivers include following functions A Short circuit protection circuit A Amplifier for driver A Undervoltage protection circuit A Overcurrent protection circuit A IGBT Chip overheating protection www..com 7MBP 50RA-060 T j=25C V C C =17V,15V, 13V 60 IGBT IPM 600V 6x50A+Chopper n Dynamic Brake C o llector Current vs. Collector-Emitter Voltage 60 C o llector Current vs. Collector-Emitter Voltage T j=125C [A] C [A] 50 C 50 V C C =17V,15V, 13V Collector Current : I Collector Current : I 40 40 30 30 20 20 10 10 0 0 1 2 3 C o llector-Emitter Voltage : V C E [V] 4 0 0 1 2 3 4 C o llector-Emitter Voltage : V C E [V] Reverse Biased Safe Operating Area Transient Thermal Resistance 300 V C C =15V, T j<125C SCSOA [C/W] 10 0 250 IGBT (non-repetitive pulse) th(j-c) [A] Collector Current : I C 200 Thermal Resistance : R 10 -1 150 100 50 RBSOA (repetitive pulse) 10 -2 10 -3 10 -2 10 -1 10 0 0 0 100 200 300 400 500 600 700 Pulse Width : P W [sec] C o llector-Em itter Voltage : V CE [V] Power Derating For IGBT 140 (per device) 120 oc Over Current Protection vs. Junction Temperature V cc =15 V [W] 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 C [A] 100 Collector Power Dissipation : P Over Current Protection Level : I 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] Case Temperature : T C [C] www..com 7MBP 50RA-060 T j=100C V C C =17V 2,5 IGBT IPM 600V 6x50A+Chopper n Control Circuit Power Supply Current vs. Switching Frequency Input Signal Threshold Voltage vs. Power Supply Voltage T j=25C 2,0 T j =125C V in(off) 1,5 V in(on) [mA] 25 N -Side 20 V C C =15V Input Signal Threshold Voltage CC V C C =13V Power Supply Current : I 15 : V in(on) , V in(off) [V] 1,0 10 P-Side 5 V C C =17V V C C =15V V C C =13V 0 5 10 15 20 25 0,5 0,0 12 13 14 15 16 17 18 19 S w itching Frequency : fsw [kHz] Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 14 12 1,0 Under Voltage Hysterisis vs. Junction Temperature [V] 0,8 [V] Under Voltage Hysterisis : V 40 60 80 100 120 140 10 8 6 4 2 0 20 UV H Under Voltage : V 0,6 0,4 0,2 0,0 20 40 60 80 100 120 140 Junction Temperature : T j [C] Junction Temperature: T j [C] Alarm Hold Time vs. Power Supply Voltage 3,0 200 Over Heating Characteristics T c O H , T jOH , T c H , T jH vs. V cc , T jOH [C] [ms] 2,5 T j=125C 2,0 T j=25C 1,5 , T jH [C] cH T jOH 150 Alarm Hold Timen : t ALM Over Heating Protection : T cOH Over Heating Hysterisis : T T cOH 100 1,0 50 0,5 T c H ,T jH 0 12 13 14 15 16 17 18 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [V] Power Supply Voltage : V cc [V] www..com 7MBP 50RA-060 T j=25C 100 IGBT IPM 600V 6x50A+Chopper n Inverter C o llector Current vs. Collector-Emitter Voltage 100 C o llector Current vs. Collector-Emitter Voltage T j=125C [A] C Collector Current : I C [A] 80 V C C =17V,15V, 13V 80 V C C =17V,15V, 13V Collector Current : I 60 60 40 40 20 20 0 0 1 2 3 4 C o llector-Emitter Voltage : V C E [V] 0 0 1 2 3 4 C o llector-Em itter Voltage : V C E [V] S w itching Time vs. Collector Current V D C =300V, V C C =15V, T j=25C S w itching Time vs. Collector Current V D C =300V, V C C =15V, T j=125C , t r, t off , t f [ns] t on t off , t r, t off , t f [ns] t off t on 1000 1000 on Switching Time : t Switching Time : t on tf tf 100 100 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 C o llector Current : I C [A] C o llector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current 100 t rr, I rr vs. I F t rr=125C [A] 90 [A] 80 70 60 50 40 30 20 10 0 0 1 rr T j =125C 25C [ns] rr 100 t rr =25C Reverse Recovery Current : I F Reverse Recovery Time : t Forward Current : I I rr=125C I rr=125C 10 2 Forward Voltage : V F [V] 3 4 0 10 20 30 40 50 60 70 80 Forward Current : I F [A] www..com 7MBP 50RA-060 Transient Thermal Resistance IGBT IPM 600V 6x50A+Chopper n Inverter Reverse Biased Safe Operating Area 500 450 V C C =15V, T j<125C SCSOA (non-repetitive pulse) Thermal Resistance : Rth(j-c) [C/W] 10 1 400 [A] C 350 300 250 200 150 100 RBSOA 50 (repetitive pulse) 0 100 200 300 400 500 600 700 0 10 0 IGBT 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 Pulse W idth : P W [sec] Collector Current : I FWD C o llector-Em itter Voltage : V CE [V] Power Derating For IGBT 200 (per device) 100 Power Derating For FWD (per device) [W] [W] 150 C Collector Power Dissipation : P Collector Power Dissipation : P C 80 60 100 40 50 20 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature : T C (C ) Case Temperature : T C (C ) Switching Loss vs. Collector Current 5 V D C =300V, V C C =15V, T j=25C 7 S w itching Loss vs. Collector Current V D C =300V, V C C =15V, T j=125C E on , E off , E rr [mJ/cycle] , E off , E rr [mJ/cycle] on 4 E on 6 5 4 3 E off 2 E off 3 2 1 0 0 10 20 30 40 50 60 70 80 E rr Switching Loss : E on 1 E rr 0 0 10 20 30 40 50 60 70 80 Collector Current : I C [A] Switching Loss : E www..com 7MBP 50RA-060 V cc =15 V IGBT IPM 600V 6x50A+Chopper n Inverter Over Current Protection vs. Junction Temperature 120 oc [A] Over Current Protection Level : I 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C ] n Outline Drawing Weight: 440g Specification is subject to change without notice March 98 |
Price & Availability of 7MBP50RA-060
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